ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
นักวิจัย : Peng, Haiyang , Li, Yongfeng , Lin, Wei Nan , Wang, Yu Zhan , Gao, Xing Yu , Wu, Tom
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Peng, H. Y., Li, Y. F., Lin, W. N., Wang, Y. Z., Gao, X. Y., & Wu, T. (2012). Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation. Scientific Reports, 2(442). , http://hdl.handle.net/10220/10084 , http://dx.doi.org/10.1038/srep00442
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Scientific reports
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.

บรรณานุกรม :
Peng, Haiyang , Li, Yongfeng , Lin, Wei Nan , Wang, Yu Zhan , Gao, Xing Yu , Wu, Tom . (2555). Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Peng, Haiyang , Li, Yongfeng , Lin, Wei Nan , Wang, Yu Zhan , Gao, Xing Yu , Wu, Tom . 2555. "Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Peng, Haiyang , Li, Yongfeng , Lin, Wei Nan , Wang, Yu Zhan , Gao, Xing Yu , Wu, Tom . "Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Peng, Haiyang , Li, Yongfeng , Lin, Wei Nan , Wang, Yu Zhan , Gao, Xing Yu , Wu, Tom . Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.