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Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder
นักวิจัย : Kumar, Aditya , He, Min , Chen, Zhong
คำค้น : DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2547
อ้างอิง : Kumar, A., He, M., & Chen, Z. (2005). Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder. Surface and Coatings Technology, 198(1-3), 283-286. , 0257-8972 , http://hdl.handle.net/10220/9385 , http://dx.doi.org/10.1016/j.surfcoat.2004.10.085
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Surface and coatings technology
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Electroless Ni–P with a thin layer of immersion gold has been considered as a promising under bump metallization (UBM) for low-cost flip–chip technology. However, the presence of P in electroless Ni–P causes complicated interfacial reactions, which affect the reliability of solder joint. In this work, barrier properties of thin Au/Ni–P UBM between Cu substrate and Sn–3.5Ag solder were investigated during annealing at 160, 180, and 200 °C in terms of IMC formation. Multilayer Sn–3.5Ag/Au/Ni–P/Cu sample was prepared by electroless chemical plating and solder reflow for the investigation. Annealing results showed that electroless Ni–P acts as a good barrier for Sn diffusion at 160 and 180 °C. However, it fails to protect the Cu substrate from reacting with Sn at 200 °C. The reason is that the electroless Ni–P layer starts converting into a ternary Ni–Sn–P layer at 200 °C. Complete conversion of the Ni–P layer into Ni–Sn–P, results in the formation of two Cu–Sn intermetallics, Cu6Sn5 and Cu3Sn, at the Ni–Sn–P/Cu interface and the formation of (NixCu1−x)6Sn5 intermetallic at the Ni3Sn4/Ni–Sn–P interface.

บรรณานุกรม :
Kumar, Aditya , He, Min , Chen, Zhong . (2547). Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Kumar, Aditya , He, Min , Chen, Zhong . 2547. "Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Kumar, Aditya , He, Min , Chen, Zhong . "Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2547. Print.
Kumar, Aditya , He, Min , Chen, Zhong . Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2547.