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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
นักวิจัย : Tripathy, Sudhiranjan , Lin, Vivian Kaixin , Dolmanan, S. B. , Tan, Joyce Pei Ying , Kajen, R. S. , Bera, L. K. , Teo, S. L. , Kumar, M. Krishna , Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Todd, Shane , Wang, W. Z. , Lo, Guo-Qiang , Li, H. , Lee, D. , Han, S.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Tripathy, S., Lin, V. K. X., Dolmanan, S. B., Tan, J. P. Y., Kajen, R. S., Bera, L. K., et al. (2012). AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111). Applied Physics Letters, 101(8), 082110-. , 0003-6951 , http://hdl.handle.net/10220/9346 , http://dx.doi.org/10.1063/1.4746751
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1 μm. The structural and optical properties of these layers are studied by cross-sectional scanning transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, and micro-Raman spectroscopy techniques. The top AlGaN/GaN heterointerfaces reveal the formation of a two-dimensional electron gas with average Hall mobility values in the range of 1800 to 1900 cm2/Vs across such 200 mm diameter GaN on Si(111) samples. The fabricated 1.5 μm-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. These experimental results show immense potential of 200-mm diameter GaN-on-silicon technology for electronic device applications.

บรรณานุกรม :
Tripathy, Sudhiranjan , Lin, Vivian Kaixin , Dolmanan, S. B. , Tan, Joyce Pei Ying , Kajen, R. S. , Bera, L. K. , Teo, S. L. , Kumar, M. Krishna , Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Todd, Shane , Wang, W. Z. , Lo, Guo-Qiang , Li, H. , Lee, D. , Han, S. . (2555). AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111).
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tripathy, Sudhiranjan , Lin, Vivian Kaixin , Dolmanan, S. B. , Tan, Joyce Pei Ying , Kajen, R. S. , Bera, L. K. , Teo, S. L. , Kumar, M. Krishna , Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Todd, Shane , Wang, W. Z. , Lo, Guo-Qiang , Li, H. , Lee, D. , Han, S. . 2555. "AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tripathy, Sudhiranjan , Lin, Vivian Kaixin , Dolmanan, S. B. , Tan, Joyce Pei Ying , Kajen, R. S. , Bera, L. K. , Teo, S. L. , Kumar, M. Krishna , Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Todd, Shane , Wang, W. Z. , Lo, Guo-Qiang , Li, H. , Lee, D. , Han, S. . "AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Tripathy, Sudhiranjan , Lin, Vivian Kaixin , Dolmanan, S. B. , Tan, Joyce Pei Ying , Kajen, R. S. , Bera, L. K. , Teo, S. L. , Kumar, M. Krishna , Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Todd, Shane , Wang, W. Z. , Lo, Guo-Qiang , Li, H. , Lee, D. , Han, S. . AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111). กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.