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Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
นักวิจัย : Dalapati, Goutam Kumar , Wong, Terence Kin Shun , Li, Yang , Chia, Ching Kean , Das, Anindita , Mahata, Chandreswar , Gao, Han , Chattopadhyay, Sanatan , Kumar, Manippady Krishna , Seng, Hwee Leng , Maiti, Chinmay Kumar , Chi, Dong Zhi
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Dalapati, G. K., Wong, T. K. S., Li, Y., Chia, C. K., Das, A., Mahata, C., et al. (2012). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. Nanoscale Research Letters, 7. , http://hdl.handle.net/10220/9334 , http://www.nanoscalereslett.com/content/7/1/99
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Nanoscale research letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).

บรรณานุกรม :
Dalapati, Goutam Kumar , Wong, Terence Kin Shun , Li, Yang , Chia, Ching Kean , Das, Anindita , Mahata, Chandreswar , Gao, Han , Chattopadhyay, Sanatan , Kumar, Manippady Krishna , Seng, Hwee Leng , Maiti, Chinmay Kumar , Chi, Dong Zhi . (2555). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Dalapati, Goutam Kumar , Wong, Terence Kin Shun , Li, Yang , Chia, Ching Kean , Das, Anindita , Mahata, Chandreswar , Gao, Han , Chattopadhyay, Sanatan , Kumar, Manippady Krishna , Seng, Hwee Leng , Maiti, Chinmay Kumar , Chi, Dong Zhi . 2555. "Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Dalapati, Goutam Kumar , Wong, Terence Kin Shun , Li, Yang , Chia, Ching Kean , Das, Anindita , Mahata, Chandreswar , Gao, Han , Chattopadhyay, Sanatan , Kumar, Manippady Krishna , Seng, Hwee Leng , Maiti, Chinmay Kumar , Chi, Dong Zhi . "Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Dalapati, Goutam Kumar , Wong, Terence Kin Shun , Li, Yang , Chia, Ching Kean , Das, Anindita , Mahata, Chandreswar , Gao, Han , Chattopadhyay, Sanatan , Kumar, Manippady Krishna , Seng, Hwee Leng , Maiti, Chinmay Kumar , Chi, Dong Zhi . Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.