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High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure
นักวิจัย : Thakare, Vishal , Xing, Guozhong , Peng, Haiyang , Rana, Abhimanyu , Game, Onkar , Anil Kumar, P. , Banpurkar, Arun , Kolekar, Yesappa , Ghosh, Kartik , Wu, Tom , Sarma, D. D. , Ogale, Satishchandra B.
คำค้น : DRNTU::Science::Physics::Electricity and magnetism.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Thakare, V., Xing, G., Peng, H., Rana, A., Game, O., Anil Kumar, P., et al. (2012). High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure. Applied Physics Letters, 100(17), 172412-. , 0003-6951 , http://hdl.handle.net/10220/9136 , http://dx.doi.org/10.1063/1.4707373
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0–100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.

บรรณานุกรม :
Thakare, Vishal , Xing, Guozhong , Peng, Haiyang , Rana, Abhimanyu , Game, Onkar , Anil Kumar, P. , Banpurkar, Arun , Kolekar, Yesappa , Ghosh, Kartik , Wu, Tom , Sarma, D. D. , Ogale, Satishchandra B. . (2555). High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Thakare, Vishal , Xing, Guozhong , Peng, Haiyang , Rana, Abhimanyu , Game, Onkar , Anil Kumar, P. , Banpurkar, Arun , Kolekar, Yesappa , Ghosh, Kartik , Wu, Tom , Sarma, D. D. , Ogale, Satishchandra B. . 2555. "High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Thakare, Vishal , Xing, Guozhong , Peng, Haiyang , Rana, Abhimanyu , Game, Onkar , Anil Kumar, P. , Banpurkar, Arun , Kolekar, Yesappa , Ghosh, Kartik , Wu, Tom , Sarma, D. D. , Ogale, Satishchandra B. . "High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Thakare, Vishal , Xing, Guozhong , Peng, Haiyang , Rana, Abhimanyu , Game, Onkar , Anil Kumar, P. , Banpurkar, Arun , Kolekar, Yesappa , Ghosh, Kartik , Wu, Tom , Sarma, D. D. , Ogale, Satishchandra B. . High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.