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Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices
นักวิจัย : Shang, Yang , Fei, Wei , Yu, Hao
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Shang, Y., Fei, W., & Yu, H. (2012). Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices. IEEE Transactions on Circuits and Systems I: Regular Papers, 59(9), 1906-1918. , http://hdl.handle.net/10220/8762 , http://dx.doi.org/10.1109/TCSI.2011.2180441 , 162564
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on circuits and systems I: regular papers
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Hybrid integration of CMOS and nonvolatile memory (NVM) devices has become the foundation for emerging nonvolatile memory-based computing. The primary challenge to validate hybrid memory system with both CMOS and NVM devices is to develop a SPICE-like simulator that can simulate the dynamic behavior accurately and efficiently. Since memristor, spin-transfer-toque magnetic-tunneling-junction (STT-MTJ) and phase-change-memory (PCM) devices are the most promising candidates of next generation of NVM devices, it is under great interest in including these new devices in the standard CMOS design flow. The previous approaches either ignore dynamic effect without consideration of internal states for dynamic behavior, or need complex equivalent circuits to represent those devices. This paper proposes a new modified nodal analysis for NVM devices with identified internal state variables for dynamic behavior. As such, compact SPICE-like implementation can be derived for all three new NVM devices in the design of large-scale memory circuits. As demonstrated by a number of examples on hybrid memory circuits with both CMOS and NVM devices, our newly developed SPICE-like simulator can capture dynamic behaviors of memristor, STT-MTJ and PCM devices, and can also reduce CPU runtime by 20-69 times when compared to the previous equivalent circuit based approaches.

บรรณานุกรม :
Shang, Yang , Fei, Wei , Yu, Hao . (2555). Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shang, Yang , Fei, Wei , Yu, Hao . 2555. "Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shang, Yang , Fei, Wei , Yu, Hao . "Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Shang, Yang , Fei, Wei , Yu, Hao . Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.