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Thermal reaction of nickel and Si0.75Ge0.25 alloy

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Thermal reaction of nickel and Si0.75Ge0.25 alloy
นักวิจัย : Pey, Kin Leong , Choi, W. K. , Chattopadhyay, Sujay , Zhao, H. B. , Fitzgerald, Eugene A. , Antoniadis, D. A. , Lee, Pooi See
คำค้น : DRNTU::Engineering::Materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2545
อ้างอิง : Pey, K. L., Choi, W. K., Chattopadhyay, S., Zhao, H. B., Fitzgerald, E. A., Antoniadis, D. A., et al (2002). Thermal reaction of nickel and Si0.75Ge0.25 alloy. Journal of Vacuum Science & Technology A, 20(6), 1903. , 0734-2101 , http://hdl.handle.net/10220/8633 , http://dx.doi.org/10.1116/1.1507339
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of vacuum science & technology A
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive and uniform silicide films for future application in SiGe based metal–oxide–semiconductor field effect transistor devices. The silicided films were characterized by the x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. Smooth and uniform nickel monogermanosilicide NiSi0.75Ge0.25 films have been observed for samples annealed at around 400–500 °C. For annealing temperatures of 500 °C and above, Ge-rich Si1−zGez grains where z>0.25 were found among Ge deficient Niy(SiwGe1−w)1−y grains where w<0.25 and the Niy(Si1−wGew)1−y phase is thermally stable up to an annealing temperature of 800 °C. We found that the Ni/SiGe reaction is mainly diffusion controlled with Ge and Ni as the dominant diffusing species compared to Si during the annealing process. In addition, Ge has been found to promote agglomeration especially above 700 °C, leading to an abrupt increase in the sheet resistance.

บรรณานุกรม :
Pey, Kin Leong , Choi, W. K. , Chattopadhyay, Sujay , Zhao, H. B. , Fitzgerald, Eugene A. , Antoniadis, D. A. , Lee, Pooi See . (2545). Thermal reaction of nickel and Si0.75Ge0.25 alloy.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Pey, Kin Leong , Choi, W. K. , Chattopadhyay, Sujay , Zhao, H. B. , Fitzgerald, Eugene A. , Antoniadis, D. A. , Lee, Pooi See . 2545. "Thermal reaction of nickel and Si0.75Ge0.25 alloy".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Pey, Kin Leong , Choi, W. K. , Chattopadhyay, Sujay , Zhao, H. B. , Fitzgerald, Eugene A. , Antoniadis, D. A. , Lee, Pooi See . "Thermal reaction of nickel and Si0.75Ge0.25 alloy."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2545. Print.
Pey, Kin Leong , Choi, W. K. , Chattopadhyay, Sujay , Zhao, H. B. , Fitzgerald, Eugene A. , Antoniadis, D. A. , Lee, Pooi See . Thermal reaction of nickel and Si0.75Ge0.25 alloy. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2545.