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Effect of copper TSV annealing on via protrusion for TSV wafer fabrication

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
นักวิจัย : Heryanto, A. , Putra, W. N. , Trigg, Alastair David , Gao, S. , Kwon, W. S. , Che, Faxing , Ang, X. F. , Wei, J. , Made, Riko I. , Gan, Chee Lip , Pey, Kin Leong
คำค้น : DRNTU::Engineering::Materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Heryanto, A., Putra, W. N., Trigg, A. D., Gao, S., Kwon, W. S., Che, F., et al. (2012). Effect of copper TSV annealing on via protrusion for TSV wafer fabrication. Journal of electronic materials, 41(9), 2533-2542. , 0361-5235 , http://hdl.handle.net/10220/8698 , http://dx.doi.org/10.1007/s11664-012-2117-3 , 166545
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of electronic materials
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is essential for commercial high-volume manufacturing. Annealing a silicon device with copper TSVs causes high stresses in the copper and may cause a “pumping” phenomenon in which copper is forced out of the blind TSV to form a protrusion. This is a potential threat to the back-end interconnect structure, particularly for low-κ materials, since it can lead to cracking or delamination. In this work, we studied the phenomenon of Cu protrusion and microstructural changes during thermal annealing of a TSV wafer. The extruded Cu-TSV was observed using scanning electron microscopy (SEM), 3D profilometry, and atomic force microscopy (AFM). The electron backscatter diffraction (EBSD) technique was employed to study the grain orientation of Cu-TSV and evolution of the grain size as a function of annealing temperature. The elastic modulus and yield stress of copper were characterized using nanoindentation. A model for Cu protrusion is proposed to provide insight into the failure mechanism. The results help to solve a key TSV-related manufacturing yield and reliability challenge by enabling high-throughput TSV fabrication for 3D IC integration.

บรรณานุกรม :
Heryanto, A. , Putra, W. N. , Trigg, Alastair David , Gao, S. , Kwon, W. S. , Che, Faxing , Ang, X. F. , Wei, J. , Made, Riko I. , Gan, Chee Lip , Pey, Kin Leong . (2555). Effect of copper TSV annealing on via protrusion for TSV wafer fabrication.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Heryanto, A. , Putra, W. N. , Trigg, Alastair David , Gao, S. , Kwon, W. S. , Che, Faxing , Ang, X. F. , Wei, J. , Made, Riko I. , Gan, Chee Lip , Pey, Kin Leong . 2555. "Effect of copper TSV annealing on via protrusion for TSV wafer fabrication".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Heryanto, A. , Putra, W. N. , Trigg, Alastair David , Gao, S. , Kwon, W. S. , Che, Faxing , Ang, X. F. , Wei, J. , Made, Riko I. , Gan, Chee Lip , Pey, Kin Leong . "Effect of copper TSV annealing on via protrusion for TSV wafer fabrication."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Heryanto, A. , Putra, W. N. , Trigg, Alastair David , Gao, S. , Kwon, W. S. , Che, Faxing , Ang, X. F. , Wei, J. , Made, Riko I. , Gan, Chee Lip , Pey, Kin Leong . Effect of copper TSV annealing on via protrusion for TSV wafer fabrication. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.