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Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects
นักวิจัย : Gan, Zhenghao , Shao, W. , Mhaisalkar, Subodh Gautam , Chen, Z. , Li, Hong Yu , Tu, K. N. , Gusak, A. M.
คำค้น : DRNTU::Engineering::Materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Gan, Z., Shao, W., Mhaisalkar, S. G., Chen, Z., Li, H., Tu, K. N., et. al. (2006). Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. Journal of materials research, 21(9), 2241-2245. , http://hdl.handle.net/10220/7699 , http://dx.doi.org/10.1557/JMR.2006.0270
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of materials research
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Electromigration (EM) in copper dual-damascene interconnects with extensions(also described as overhang regions or reservoirs) in the upper metal (M2) were investigated. It was found that as the extension length increases from 0 to 60 nm, the median-time-to-failure increased from 50 to 140 h, representing a ∼200% improvement in lifetimes. However, further increment of the extension length from 60 to 120 nm did not result in any significant improvement in EM lifetimes. Based on calculations of current densities in the reservoir regions and recently reported nucleation, void movement, and agglomeration-based EM phenomena, it is proposed that there is a critical extension length beyond which increasing extension lengths will not lead to longer EM lifetimes.

บรรณานุกรม :
Gan, Zhenghao , Shao, W. , Mhaisalkar, Subodh Gautam , Chen, Z. , Li, Hong Yu , Tu, K. N. , Gusak, A. M. . (2549). Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Gan, Zhenghao , Shao, W. , Mhaisalkar, Subodh Gautam , Chen, Z. , Li, Hong Yu , Tu, K. N. , Gusak, A. M. . 2549. "Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Gan, Zhenghao , Shao, W. , Mhaisalkar, Subodh Gautam , Chen, Z. , Li, Hong Yu , Tu, K. N. , Gusak, A. M. . "Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Gan, Zhenghao , Shao, W. , Mhaisalkar, Subodh Gautam , Chen, Z. , Li, Hong Yu , Tu, K. N. , Gusak, A. M. . Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.