ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Impact ionization and auger recombination rates in semiconductor quantum dots

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Impact ionization and auger recombination rates in semiconductor quantum dots
นักวิจัย : Fu, Ying , Zhou, Y. H. , Su, Haibin , Boey, Freddy Yin Chiang , Ågren, Hans
คำค้น : DRNTU::Engineering::Materials::Microelectronics and semiconductor materials.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2553
อ้างอิง : Fu, Y., Zhou, Y. H., Su, H., Boey, F. Y. C., & Ågren, H. (2010). Impact ionization and auger recombination rates in semiconductor quantum dots. Journal of physical chemistry C, 114 (9), 3743–3747. , http://hdl.handle.net/10220/7429 , http://dx.doi.org/10.1021/jp9082486
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of physical chemistry C
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Impact ionization and Auger recombination in nanoscale spherical quantum dots (QDs) have been studied theoretically. It is shown that due to the strong quantum confinement of both electrons in the conduction band and holes in the valence band, impact ionization and Auger recombination energies in these QDs can be on the order of a few millielectronvolts when various selection rules are fulfilled, which are much higher than spontaneous radiative emission energies. This explains the experimentally reported high occurrence rates of the multiple exciton generation (MEG) effect in QDs. However, due to quantum confinement, the energy states are discrete in QDs, especially for low-energy states where the densities of states are low. This implies that only a limited number of high-energy electron states can interact with (i.e., impact ionize) low-energy hole states in QDs having certain values of radii due to the energy conservation requirement. This explains the vastly scattered experimental data and difficulties in utilizing the MEG effect in practice.

บรรณานุกรม :
Fu, Ying , Zhou, Y. H. , Su, Haibin , Boey, Freddy Yin Chiang , Ågren, Hans . (2553). Impact ionization and auger recombination rates in semiconductor quantum dots.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Fu, Ying , Zhou, Y. H. , Su, Haibin , Boey, Freddy Yin Chiang , Ågren, Hans . 2553. "Impact ionization and auger recombination rates in semiconductor quantum dots".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Fu, Ying , Zhou, Y. H. , Su, Haibin , Boey, Freddy Yin Chiang , Ågren, Hans . "Impact ionization and auger recombination rates in semiconductor quantum dots."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2553. Print.
Fu, Ying , Zhou, Y. H. , Su, Haibin , Boey, Freddy Yin Chiang , Ågren, Hans . Impact ionization and auger recombination rates in semiconductor quantum dots. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2553.