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Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Illumination-enhanced hysteresis of transistors based on carbon nanotube networks
นักวิจัย : Lee, Chun Wei , Dong, Xiaochen , Goh, Seok Hong , Wang, Junling , Wei, Jun , Li, Lain-Jong
คำค้น : DRNTU::Engineering::Materials::Nanostructured materials.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2552
อ้างอิง : Lee, C. W., Dong, X., Goh, S. H., Wang, J., Wei, J., & Li, L. J. (2009). Illumination-Enhanced Hysteresis of Transistors Based on Carbon Nanotube Networks. Journal of physical chemistry C, 113 (12), 4745-4747. , http://hdl.handle.net/10220/7420 , http://dx.doi.org/10.1021/jp811006r
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of physical chemistry C
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si−SiO2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea 129−184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO2 surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si−SiO2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltage-activated hole trapping process on SiO2 surfaces.

บรรณานุกรม :
Lee, Chun Wei , Dong, Xiaochen , Goh, Seok Hong , Wang, Junling , Wei, Jun , Li, Lain-Jong . (2552). Illumination-enhanced hysteresis of transistors based on carbon nanotube networks.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Chun Wei , Dong, Xiaochen , Goh, Seok Hong , Wang, Junling , Wei, Jun , Li, Lain-Jong . 2552. "Illumination-enhanced hysteresis of transistors based on carbon nanotube networks".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Chun Wei , Dong, Xiaochen , Goh, Seok Hong , Wang, Junling , Wei, Jun , Li, Lain-Jong . "Illumination-enhanced hysteresis of transistors based on carbon nanotube networks."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2552. Print.
Lee, Chun Wei , Dong, Xiaochen , Goh, Seok Hong , Wang, Junling , Wei, Jun , Li, Lain-Jong . Illumination-enhanced hysteresis of transistors based on carbon nanotube networks. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2552.