ชื่อเรื่อง | : | New salicidation technology with Ni(Pt) alloy for MOSFETs |
นักวิจัย | : | Lee, Pooi See , Pey, Kin Leong , Mangelinck, D. , Ding, Jun , Chi, Dong Zhi , Chan, L. |
คำค้น | : | DRNTU::Engineering::Materials |
หน่วยงาน | : | Nanyang Technological University, Singapore |
ผู้ร่วมงาน | : | - |
ปีพิมพ์ | : | 2544 |
อ้างอิง | : | Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Chi, D. Z., & Chan, L. (2001). New Salicidation Technology with Ni(Pt) Alloy for MOSFETs. IEEE Electron Device Letters, 22(12), 568-570. , http://hdl.handle.net/10220/8340 , http://dx.doi.org/10.1109/55.974579 |
ที่มา | : | - |
ความเชี่ยวชาญ | : | - |
ความสัมพันธ์ | : | IEEE electron device letters |
ขอบเขตของเนื้อหา | : | - |
บทคัดย่อ/คำอธิบาย | : | A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) windowby delaying the nucleation of NiSi2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage. |
บรรณานุกรม | : |
Lee, Pooi See , Pey, Kin Leong , Mangelinck, D. , Ding, Jun , Chi, Dong Zhi , Chan, L. . (2544). New salicidation technology with Ni(Pt) alloy for MOSFETs.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Lee, Pooi See , Pey, Kin Leong , Mangelinck, D. , Ding, Jun , Chi, Dong Zhi , Chan, L. . 2544. "New salicidation technology with Ni(Pt) alloy for MOSFETs".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Lee, Pooi See , Pey, Kin Leong , Mangelinck, D. , Ding, Jun , Chi, Dong Zhi , Chan, L. . "New salicidation technology with Ni(Pt) alloy for MOSFETs."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2544. Print. Lee, Pooi See , Pey, Kin Leong , Mangelinck, D. , Ding, Jun , Chi, Dong Zhi , Chan, L. . New salicidation technology with Ni(Pt) alloy for MOSFETs. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2544.
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