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Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
นักวิจัย : Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J.
คำค้น : DRNTU::Engineering::Materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., & Tang, L. J. (2006). Improved Electrical Performance of Erbium Silicide Schottky Diodes formed by pre-RTA Amorphization of Si. IEEE Electron Device Letters, 27(2), 93-95. , http://hdl.handle.net/10220/8338 , http://dx.doi.org/10.1109/LED.2005.863142
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE electron device letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the ϕ_Beff and of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.

บรรณานุกรม :
Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . (2549). Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . 2549. "Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . "Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Tan, Eu Jin , Pey, Kin Leong , Chi, Dong Zhi , Lee, Pooi See , Tang, L. J. . Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.