The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate and patterned gate devices. Drain current hysteresis is resulted from the dipole switching at channel region due to gate-source bias. For common gate device, an additional anomalous polarization switching is observed due to gate-drain bias. This switching has no effect on the hysteresis direction yet incurs a strong peak in the off drain current leading to unstable and uncontrollable off state in memory device. Reduction of gate-drain overlapping using patterned metal gate shows diminishing the anomalous switching hence improves performance of the ferroelectric transistors.