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Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
นักวิจัย : Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Hoe, Keat Mun , Cui, Guangda , Lee, Pooi See
คำค้น : DRNTU::Engineering::Materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2551
อ้างอิง : Tan, E. J., Pey, K. L., Singh, N., Lo, G., Q., Chi, D. Z., Chin, Y. K., et al. (2008). Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/drain and Silicon Nanowire Channel. IEEE Electron Device Letters, 29(10), 1167-1170. , http://hdl.handle.net/10220/8343 , http://dx.doi.org/10.1109/LED.2008.2004508
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE electron device letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky transistors show acceptable drive current ~900 μA/μm and high Ion/Ioff ratio (~105). This is attributed to the improved carrier injection as a result of low Schottky barrier height (Φb) of ErSi2−x/n − Si(~0.3 eV) and the nanometer-sized (~8 nm) Schottky junction. The carrier transport is found to be dominated by the metal–semiconductor interface instead of the channel body speculated from the channel length independent behavior of the devices. Furthermore, the transistors exhibit ambipolar characteristics, which are modeled using thermionic/ thermionic-field emission for positive and thermionic-field emission for negative gate biases.

บรรณานุกรม :
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Hoe, Keat Mun , Cui, Guangda , Lee, Pooi See . (2551). Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Hoe, Keat Mun , Cui, Guangda , Lee, Pooi See . 2551. "Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Hoe, Keat Mun , Cui, Guangda , Lee, Pooi See . "Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2551. Print.
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Hoe, Keat Mun , Cui, Guangda , Lee, Pooi See . Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2551.