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Modification of Ta/polymeric low-k interface by electron beam treatment

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Modification of Ta/polymeric low-k interface by electron beam treatment
นักวิจัย : Gan, Zhenghao , Mhaisalkar, Subodh Gautam , Chen, Zhong , Chen, Zhe , Prasad, K. , Zhang, Sam , Damayanti, M. , Jiang, Ning
คำค้น : DRNTU::Engineering::Materials.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Gan, Z., Mhaisalkar, S. G., Chen, Z., Chen, Z., Prasad, K., Zhang, S., et al. (2006). Modification of Ta/polymeric low-k interface by electron beam treatment. Journal of the electrochemical society, 153. , http://hdl.handle.net/10220/7701 , http://dx.doi.org/10.1149/1.2129493
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of the electrochemical society
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric constant to reduce resistance-capacitance (RC) delay. One of the requirements of a low-k material includes its good adhesion to the other interconnect materials. In the present study, the adhesion energy (Gc) of the barrier layer Ta/PAE interface was quantitatively measured by a four-point bending technique. The obtained Gc value of the pristine Ta/PAE interface was 5.9 ± 1.1 J/m2. If the PAE was subjected to electron-beam (EB) treatment with low dose (20 μC/cm2) prior to Ta deposition, Gc value increased to 8.1 ± 0.5 J/m2. However, with high-dose (40 μC/cm2) EB treatment, Gc value reduced to 4.0 ± 0.6 J/m2. The adhesion improvement and degradation induced by low- and high-dose EB were correlated to the increase and reduction of the amount of C–Ta bonds at the Ta/PAE interface, respectively. The phenomena were further studied by X-ray photoelectron spectroscopy analysis.

บรรณานุกรม :
Gan, Zhenghao , Mhaisalkar, Subodh Gautam , Chen, Zhong , Chen, Zhe , Prasad, K. , Zhang, Sam , Damayanti, M. , Jiang, Ning . (2549). Modification of Ta/polymeric low-k interface by electron beam treatment.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Gan, Zhenghao , Mhaisalkar, Subodh Gautam , Chen, Zhong , Chen, Zhe , Prasad, K. , Zhang, Sam , Damayanti, M. , Jiang, Ning . 2549. "Modification of Ta/polymeric low-k interface by electron beam treatment".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Gan, Zhenghao , Mhaisalkar, Subodh Gautam , Chen, Zhong , Chen, Zhe , Prasad, K. , Zhang, Sam , Damayanti, M. , Jiang, Ning . "Modification of Ta/polymeric low-k interface by electron beam treatment."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Gan, Zhenghao , Mhaisalkar, Subodh Gautam , Chen, Zhong , Chen, Zhe , Prasad, K. , Zhang, Sam , Damayanti, M. , Jiang, Ning . Modification of Ta/polymeric low-k interface by electron beam treatment. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.