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Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air.

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air.
นักวิจัย : Wang, Y. G. , Lau, S. P. , Lee, H. W. , Yu, S. F. , Tay, B. K. , Zhang, X. H. , Hng, H. H.
คำค้น : DRNTU::Science::Physics.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2546
อ้างอิง : Wang, Y. G., Lau, S. P., Lee, H. W., Yu, S. F., Tay, B. K., Zhang, X. H., et al. (2003). Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air. Journal of applied physics, 94(1), 354-358. , http://hdl.handle.net/10220/18818 , http://dx.doi.org/ 10.1063/1.1577819
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The influence of annealing temperatures ranging from 320 to 1000 °C on the structural and optical properties of ZnO films is investigated systematically using x-ray diffraction and room temperature photoluminescence (PL). The films show a polycrystalline hexagonal wurtzite structure without preferred orientation. Room temperature PL spectra of the ZnO films display two emission bands, predominant excitonic ultraviolet (UV) emission and weak deep level visible emission. It is observed that the ZnO film annealed at 410 °C exhibits the strongest UV emission intensity and narrowest full width at half maximum (81 meV) among the temperature ranges studied. The excellent UV emission from the film annealed at 410 °C is attributed to the good crystalline quality of the ZnO film and the low rate of formation of intrinsic defects at such low temperature. The visible emission consists of two components in the green and yellow range, and they show different temperature dependent behavior from UV emission. Their possible origins are discussed.

บรรณานุกรม :
Wang, Y. G. , Lau, S. P. , Lee, H. W. , Yu, S. F. , Tay, B. K. , Zhang, X. H. , Hng, H. H. . (2546). Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air..
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wang, Y. G. , Lau, S. P. , Lee, H. W. , Yu, S. F. , Tay, B. K. , Zhang, X. H. , Hng, H. H. . 2546. "Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air.".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wang, Y. G. , Lau, S. P. , Lee, H. W. , Yu, S. F. , Tay, B. K. , Zhang, X. H. , Hng, H. H. . "Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air.."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2546. Print.
Wang, Y. G. , Lau, S. P. , Lee, H. W. , Yu, S. F. , Tay, B. K. , Zhang, X. H. , Hng, H. H. . Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air.. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2546.