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The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K
นักวิจัย : Li, D. , Qin, X. Y. , Li, H. J. , Zhang, J. , Hng, Huey Hoon
คำค้น : DRNTU::Science::Physics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2551
อ้างอิง : Li, D., Qin, X. Y., Li, H. J., Zhang, J. & Hng, H. H. (2008). The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K. Journal of applied physics, 103(12), 123704-. , http://hdl.handle.net/10220/18825 , http://dx.doi.org/10.1063/1.2938748
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The effects of high-pressure compression on the transport and thermoelectric properties of TiS2 were investigated at temperatures ranging from 5 to 310 K. The results indicated that compression under the pressure of 6 GPa caused a significant decrease (16-fold at 300 K) in the absolute thermopower |S| and the thermal conductivity (5-fold at 300 K). At the same time, the electrical resistivity ρ increased by two orders of magnitude after the compression. A transition from metallic state (dρ /dT>0) to semiconductorlike state (dρ /dT<0) was found to occur after the compression. This transition to the semiconductorlike state could be caused by the substantially enhanced grain boundary (GB) scattering due to the refinement of its grains to the nanoscale range, which should also be responsible for the remarkable increase in the resistivity and large decrease in thermal conductivity. Moreover, Mott’s two-dimensional variable range hopping law, ln ρ∝T-1/3, was observed at T<~100 K for TiS2 after the compression, suggesting that substantial potential disorder was produced by the high-pressure compression. The significant decrease of |S| could originate from the possible compositional disorder in the GBs of TiS2 after compression. The thermoelectric figure of merit of TiS2 decreased after the compaction due to the large decrease in |S| and increase in ρ, indicating that high-pressure compression is not beneficial to the thermoelectric performance of TiS2.

บรรณานุกรม :
Li, D. , Qin, X. Y. , Li, H. J. , Zhang, J. , Hng, Huey Hoon . (2551). The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, D. , Qin, X. Y. , Li, H. J. , Zhang, J. , Hng, Huey Hoon . 2551. "The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, D. , Qin, X. Y. , Li, H. J. , Zhang, J. , Hng, Huey Hoon . "The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2551. Print.
Li, D. , Qin, X. Y. , Li, H. J. , Zhang, J. , Hng, Huey Hoon . The effects of high-pressure compression on transport and thermoelectric properties of TiS2 at low temperatures from 5 to 310K. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2551.