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Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
นักวิจัย : Xu, S. J. , Li, G. Q. , Wang, Y. J. , Zhao, Yang , Chen, Guan Hua , Zhao, D. G. , Zhu, J. J. , Yang, H. , Yu, D. P. , Wang, J. N.
คำค้น : DRNTU::Science::Physics::Optics and light. , DRNTU::Engineering::Materials::Photonics and optoelectronics materials.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Xu, S. J., Li, G. Q., Wang, Y. J., Zhao, Y., Chen, G. H., Zhao, D. G., et al. (2006). Quantum dissipation and broadening mechanisms due to electron-phonon interactions in Si-doped self-formed InGaN quantum dots, Applied Physics Letters 88, 1-3. , http://hdl.handle.net/10220/6728 , http://dx.doi.org/10.1063/1.2179113
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ~0.2 and 200 cm−1, respectively, for the InGaN QDs.

บรรณานุกรม :
Xu, S. J. , Li, G. Q. , Wang, Y. J. , Zhao, Yang , Chen, Guan Hua , Zhao, D. G. , Zhu, J. J. , Yang, H. , Yu, D. P. , Wang, J. N. . (2549). Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Xu, S. J. , Li, G. Q. , Wang, Y. J. , Zhao, Yang , Chen, Guan Hua , Zhao, D. G. , Zhu, J. J. , Yang, H. , Yu, D. P. , Wang, J. N. . 2549. "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Xu, S. J. , Li, G. Q. , Wang, Y. J. , Zhao, Yang , Chen, Guan Hua , Zhao, D. G. , Zhu, J. J. , Yang, H. , Yu, D. P. , Wang, J. N. . "Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Xu, S. J. , Li, G. Q. , Wang, Y. J. , Zhao, Yang , Chen, Guan Hua , Zhao, D. G. , Zhu, J. J. , Yang, H. , Yu, D. P. , Wang, J. N. . Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.