ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
นักวิจัย : Xu, D. W. , Yoon, Soon Fatt , Ding, Y. , Tong, Cunzhu , Fan, Weijun , Zhao, L. J.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2554
อ้างอิง : Xu, D. W., Yoon, S. F., Ding, Y., Tong, C., Fan, W., & Zhao, L. J. (2011). 1.3-μm In(Ga)As Quantum-dot VCSELs Fabricated by Dielectric-free Approach with Surface-relief Process. IEEE photonics technology letters, 23(2), 91-93. , 1041-1135 , http://hdl.handle.net/10220/6756 , http://dx.doi.org/10.1109/LPT.2010.2091269 , 156404
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE photonics technology letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed.

บรรณานุกรม :
Xu, D. W. , Yoon, Soon Fatt , Ding, Y. , Tong, Cunzhu , Fan, Weijun , Zhao, L. J. . (2554). 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Xu, D. W. , Yoon, Soon Fatt , Ding, Y. , Tong, Cunzhu , Fan, Weijun , Zhao, L. J. . 2554. "1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Xu, D. W. , Yoon, Soon Fatt , Ding, Y. , Tong, Cunzhu , Fan, Weijun , Zhao, L. J. . "1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print.
Xu, D. W. , Yoon, Soon Fatt , Ding, Y. , Tong, Cunzhu , Fan, Weijun , Zhao, L. J. . 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.