| ชื่อเรื่อง | : | Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide |
| นักวิจัย | : | Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2547 |
| อ้างอิง | : | Li, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137. , 1099-0062 , http://hdl.handle.net/10220/6408 , http://dx.doi.org/10.1149/1.1736593 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Electrochemical and solid state letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping. |
| บรรณานุกรม | : |
Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . (2547). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . 2547. "Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . "Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2547. Print. Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2547.
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