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Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide
นักวิจัย : Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2547
อ้างอิง : Li, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137. , 1099-0062 , http://hdl.handle.net/10220/6408 , http://dx.doi.org/10.1149/1.1736593
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Electrochemical and solid state letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.

บรรณานุกรม :
Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . (2547). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . 2547. "Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . "Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2547. Print.
Li, S. , Zhao, P. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Tse, Man Siu , Fung, Stevenson Hon Yuen , Liu, Yu Chan . Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2547.