| ชื่อเรื่อง | : | Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| นักวิจัย | : | Gui, D. , Ng, Chi Yung , Chen, Tupei , Liu, Yang , Tse, Man Siu |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2548 |
| อ้างอิง | : | Gui, D., Ng, C. Y., Chen, T. P., Liu, Y., & Tse, M. S. (2005). Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures. Electrochemical and Solid State Letters, 8(1), G8-G10. , 1099-0062 , http://hdl.handle.net/10220/6428 , http://dx.doi.org/10.1149/1.1830392 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Electrochemical and solid state letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing. |
| บรรณานุกรม | : |
Gui, D. , Ng, Chi Yung , Chen, Tupei , Liu, Yang , Tse, Man Siu . (2548). Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Gui, D. , Ng, Chi Yung , Chen, Tupei , Liu, Yang , Tse, Man Siu . 2548. "Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Gui, D. , Ng, Chi Yung , Chen, Tupei , Liu, Yang , Tse, Man Siu . "Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print. Gui, D. , Ng, Chi Yung , Chen, Tupei , Liu, Yang , Tse, Man Siu . Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.
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