ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals
นักวิจัย : Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Ng, C. Y., Chen, T. P., Yang, M., Yang, J. B., Ding, L., Li, C. M., et al. (2006). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. IEEE Transactions on Electron Devices, 53(4), 663-667. , 0018-9383 , http://hdl.handle.net/10220/6427 , http://dx.doi.org/10.1109/TED.2006.870281
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on electron devices
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si+ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at both room temperature and 85°C is investigated. The CHE programming has a larger memory window, a better endurance, and a longer retention time as compared to FN programming. In addition, the CHE programming yields less stress-induced leakage current than FN programming, suggesting that it produces less damage to the gate oxide and the oxide/Si interface. Detailed discussions on the impact of the programming mechanisms are presented.

บรรณานุกรม :
Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . (2549). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . 2549. "Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . "Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Ng, Chi Yung , Chen, Tupei , Yang, Ming , Yang, Jian Bo , Ding, Liang , Li, Chang Ming , Du, A. , Trigg, Alastair David . Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.