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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance
นักวิจัย : Zhao, P. , Yang, X. H. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Tse, Man Siu , Trigg, Alastair David , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Zhao, P., Yang, X. H., Ng, C. Y., Chen, T., Ding, L., & Yang, M., et al. (2006). Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance. IEEE transactions on electron devices, 53(4), 730-736. , 0018-9383 , http://hdl.handle.net/10220/6403 , http://dx.doi.org/10.1109/TED.2006.870872
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on electron devices
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained.

บรรณานุกรม :
Zhao, P. , Yang, X. H. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Tse, Man Siu , Trigg, Alastair David , Fung, Stevenson Hon Yuen . (2549). Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhao, P. , Yang, X. H. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Tse, Man Siu , Trigg, Alastair David , Fung, Stevenson Hon Yuen . 2549. "Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhao, P. , Yang, X. H. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Tse, Man Siu , Trigg, Alastair David , Fung, Stevenson Hon Yuen . "Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Zhao, P. , Yang, X. H. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Tse, Man Siu , Trigg, Alastair David , Fung, Stevenson Hon Yuen . Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.