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Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures
นักวิจัย : Tseng, Ampere A. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Ding, Liang , Tse, Man Siu , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Tseng, A. A., Liu, Y., Chen, T. P., Ng, C. Y., Ding, L., Tse, M. S., et al. (2006). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures. IEEE Transactions on Electron Devices, 53(4), 914-917. , 0018-9383 , http://hdl.handle.net/10220/6415 , http://dx.doi.org/10.1109/TED.2006.870528
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on electron devices
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

In this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distribution. For the case of nc-Si being confined in a layer in the oxide close to the gate, charging and discharging the nc-Si lead to a shift in the flat-band voltage, and a small difference in the location of the peak concentration of nc-Si can yield a large difference in the memory programming characteristics. However, for the case of nc-Si distributed throughout the oxide with a high concentration, charging and discharging the nc-Si cause a modulation in the capacitance magnitude instead of the flat-band voltage shift. The difference between the two cases highlights the importance of the nc-Si distribution in the memory device applications of the nc-Si.

บรรณานุกรม :
Tseng, Ampere A. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Ding, Liang , Tse, Man Siu , Fung, Stevenson Hon Yuen . (2549). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tseng, Ampere A. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Ding, Liang , Tse, Man Siu , Fung, Stevenson Hon Yuen . 2549. "Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tseng, Ampere A. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Ding, Liang , Tse, Man Siu , Fung, Stevenson Hon Yuen . "Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Tseng, Ampere A. , Liu, Yang , Chen, Tupei , Ng, Chi Yung , Ding, Liang , Tse, Man Siu , Fung, Stevenson Hon Yuen . Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.