| ชื่อเรื่อง | : | Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam |
| นักวิจัย | : | Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Ng, C. Y., Chen, T. P., Ding, L., & Fung, S. H. Y. (2006). Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam. IEEE Electron Device Letters, 27(4), 231-233. , 0741-3106 , http://hdl.handle.net/10220/6413 , http://dx.doi.org/10.1109/LED.2006.871183 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE electron device letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Densely stacked silicon nanocrystal layers embedded in the gate oxide of MOSFETs are synthesized with Si ion implantation into an SiO2 layer at an implantation energy of 2 keV. In this letter, the memory characteristics of MOSFETs with 7-nm tunnel oxide and 20-nm control oxide at various temperatures have been investigated. A threshold voltage window of ∼ 0.5 V is achieved under write/erase (W/E) voltages of +12 V/-12 V for 1 ms. The devices exhibit good endurance up to 105 W/E cycles even at a high operation temperature of 150°C. They also have good retention characteristics with an extrapolated ten-year memory window of ∼ 0.3 V at 100°C. |
| บรรณานุกรม | : |
Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . (2549). Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . 2549. "Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . "Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
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