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Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam
นักวิจัย : Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Ng, C. Y., Chen, T. P., Ding, L., & Fung, S. H. Y. (2006). Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam. IEEE Electron Device Letters, 27(4), 231-233. , 0741-3106 , http://hdl.handle.net/10220/6413 , http://dx.doi.org/10.1109/LED.2006.871183
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE electron device letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Densely stacked silicon nanocrystal layers embedded in the gate oxide of MOSFETs are synthesized with Si ion implantation into an SiO2 layer at an implantation energy of 2 keV. In this letter, the memory characteristics of MOSFETs with 7-nm tunnel oxide and 20-nm control oxide at various temperatures have been investigated. A threshold voltage window of ∼ 0.5 V is achieved under write/erase (W/E) voltages of +12 V/-12 V for 1 ms. The devices exhibit good endurance up to 105 W/E cycles even at a high operation temperature of 150°C. They also have good retention characteristics with an extrapolated ten-year memory window of ∼ 0.3 V at 100°C.

บรรณานุกรม :
Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . (2549). Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . 2549. "Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . "Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Ng, Chi Yung , Chen, Tupei , Ding, Liang , Fung, Stevenson Hon Yuen . Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.