ชื่อเรื่อง | : | Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides |
นักวิจัย | : | Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen |
คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
หน่วยงาน | : | Nanyang Technological University, Singapore |
ผู้ร่วมงาน | : | - |
ปีพิมพ์ | : | 2549 |
อ้างอิง | : | Chen, Q., Zhao, P., Tseng, A. A., Ng, C. Y., Chen T. P., Ding, L., et al. (2006). Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides. IEEE Transactions on Electron Devices, 53(5), 1280-1282. , 0018-9383 , http://hdl.handle.net/10220/6405 , http://dx.doi.org/10.1109/TED.2006.871841 |
ที่มา | : | - |
ความเชี่ยวชาญ | : | - |
ความสัมพันธ์ | : | IEEE transactions on electron devices |
ขอบเขตของเนื้อหา | : | - |
บทคัดย่อ/คำอธิบาย | : | Effect of the trapped Si ions in a 30-nm gate oxide implanted with Si+ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700°C for 20 min, although only 0.1 per cent of the implanted Si ions remained, it can cause a flatband voltage shift of -21.3 V, and the flatband voltage shift reduces with time under a negative gate voltage showing neutralization of the trapped ions by the injected electrons from the gate. However, the annealing at 900°C for 20 min has reduced the number of the remaining ions to the lowest limit corresponding to a flatband voltage shift of -0.1 V, and the application of the negative voltage does not change the flatband voltage. A higher annealing temperature or a longer annealing time does not show further improvement, suggesting that the annealing at 900°C for 20 min is sufficient for eliminating the effect of the trapped ions. |
บรรณานุกรม | : |
Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . (2549). Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . 2549. "Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . "Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
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