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Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides
นักวิจัย : Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Chen, Q., Zhao, P., Tseng, A. A., Ng, C. Y., Chen T. P., Ding, L., et al. (2006). Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides. IEEE Transactions on Electron Devices, 53(5), 1280-1282. , 0018-9383 , http://hdl.handle.net/10220/6405 , http://dx.doi.org/10.1109/TED.2006.871841
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on electron devices
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Effect of the trapped Si ions in a 30-nm gate oxide implanted with Si+ at a very low energy (1.3 keV) on the flatband voltage after various thermal annealing has been examined. For the annealing at 700°C for 20 min, although only 0.1 per cent of the implanted Si ions remained, it can cause a flatband voltage shift of -21.3 V, and the flatband voltage shift reduces with time under a negative gate voltage showing neutralization of the trapped ions by the injected electrons from the gate. However, the annealing at 900°C for 20 min has reduced the number of the remaining ions to the lowest limit corresponding to a flatband voltage shift of -0.1 V, and the application of the negative voltage does not change the flatband voltage. A higher annealing temperature or a longer annealing time does not show further improvement, suggesting that the annealing at 900°C for 20 min is sufficient for eliminating the effect of the trapped ions.

บรรณานุกรม :
Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . (2549). Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . 2549. "Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . "Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Chen, Q. , Zhao, P. , Tseng, Ampere A. , Ng, Chi Yung , Chen, Tupei , Ding, Liang , Liu, Yang , Fung, Stevenson Hon Yuen . Si ion-induced instability in flatband voltage of Si+ -implanted gate oxides. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.