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Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams
นักวิจัย : Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Ng, C. Y., Chen, T. P., Zhao, P., Ding, L., Liu, Y., Tseng, A. A., et al. (2006). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Journal of Applied Physics, 99, 1-3. , 0021-8979 , http://hdl.handle.net/10220/6426 , http://dx.doi.org/10.1063/1.2191737
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also.

บรรณานุกรม :
Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . (2549). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . 2549. "Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . "Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.