| ชื่อเรื่อง | : | Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams |
| นักวิจัย | : | Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Ng, C. Y., Chen, T. P., Zhao, P., Ding, L., Liu, Y., Tseng, A. A., et al. (2006). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Journal of Applied Physics, 99, 1-3. , 0021-8979 , http://hdl.handle.net/10220/6426 , http://dx.doi.org/10.1063/1.2191737 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also. |
| บรรณานุกรม | : |
Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . (2549). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . 2549. "Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . "Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Ng, Chi Yung , Chen, Tupei , Zhao, P. , Ding, Liang , Liu, Yang , Tseng, Ampere A. , Fung, Stevenson Hon Yuen . Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
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