ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
นักวิจัย : Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2550
อ้างอิง : Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4. , 0021-8979 , http://hdl.handle.net/10220/6425 , http://dx.doi.org/10.1063/1.2713946
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

บรรณานุกรม :
Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . (2550). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . 2550. "Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . "Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print.
Liu, Yang , Chen, Tupei , Ding, Liang , Yang, Ming , Wong, Jen It , Ng, Chi Yung , Yu, Siu Fung , Li, Zeng Xiang , Yuen, Chau , Zhu, Fu Rong , Tan, M. C. , Fung, Stevenson Hon Yuen . Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.