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Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
นักวิจัย : Yang, Ming , Chen, Tupei , Wong, Jen It , Ng, Chi Yung , Liu, Yang , Ding, Liang , Fung, Stevenson Hon Yuen , Trigg, Alastair David , Tung, Chih Hang , Li, Chang Ming
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. , DRNTU::Engineering::Chemical engineering::Biochemical engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2550
อ้างอิง : Yang, M., Chen, T., Wong, J. I., Ng, C. Y., Liu, Y., Ding, L., et al. (2007). Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. Journal of Applied Physics, 101, 1-5. , 0021-8979 , http://hdl.handle.net/10220/6352 , http://dx.doi.org/10.1063/1.2749470
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800  degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time.

บรรณานุกรม :
Yang, Ming , Chen, Tupei , Wong, Jen It , Ng, Chi Yung , Liu, Yang , Ding, Liang , Fung, Stevenson Hon Yuen , Trigg, Alastair David , Tung, Chih Hang , Li, Chang Ming . (2550). Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Yang, Ming , Chen, Tupei , Wong, Jen It , Ng, Chi Yung , Liu, Yang , Ding, Liang , Fung, Stevenson Hon Yuen , Trigg, Alastair David , Tung, Chih Hang , Li, Chang Ming . 2550. "Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Yang, Ming , Chen, Tupei , Wong, Jen It , Ng, Chi Yung , Liu, Yang , Ding, Liang , Fung, Stevenson Hon Yuen , Trigg, Alastair David , Tung, Chih Hang , Li, Chang Ming . "Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print.
Yang, Ming , Chen, Tupei , Wong, Jen It , Ng, Chi Yung , Liu, Yang , Ding, Liang , Fung, Stevenson Hon Yuen , Trigg, Alastair David , Tung, Chih Hang , Li, Chang Ming . Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.