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Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions
นักวิจัย : Ding, Liang , Ye, J. D. , Liu, Yang , Wong, Jen It , Fung, Stevenson Hon Yuen , Cen, Zhan Hong , Chen, Tupei , Liu, Zhen , Yang, Ming
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2552
อ้างอิง : Ding, L., Ye, J. D., Liu, Y., Wong, J. I., Fung, S. H. Y., Cen, Z. H., et al. (2009). Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions. Electrochemical and Solid State Letters, 12(2), H38-H40. , 1099-0062 , http://hdl.handle.net/10220/6422 , http://dx.doi.org/10.1149/1.3039952
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Electrochemical and solid state letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ~680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of sigma and sigma*, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100 degree celcius, and it is attributed to the formation of stable Si nanoclusters.

บรรณานุกรม :
Ding, Liang , Ye, J. D. , Liu, Yang , Wong, Jen It , Fung, Stevenson Hon Yuen , Cen, Zhan Hong , Chen, Tupei , Liu, Zhen , Yang, Ming . (2552). Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ding, Liang , Ye, J. D. , Liu, Yang , Wong, Jen It , Fung, Stevenson Hon Yuen , Cen, Zhan Hong , Chen, Tupei , Liu, Zhen , Yang, Ming . 2552. "Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ding, Liang , Ye, J. D. , Liu, Yang , Wong, Jen It , Fung, Stevenson Hon Yuen , Cen, Zhan Hong , Chen, Tupei , Liu, Zhen , Yang, Ming . "Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2552. Print.
Ding, Liang , Ye, J. D. , Liu, Yang , Wong, Jen It , Fung, Stevenson Hon Yuen , Cen, Zhan Hong , Chen, Tupei , Liu, Zhen , Yang, Ming . Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2552.