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16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating
นักวิจัย : Li, Qiang , Zhang, Yue Ping , Yeo, Kiat Seng , Lim, Wei Meng
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2551
อ้างอิง : Li, Q., Zhang, Y. P., Yeo, K. S., & Lim, W. M. (2008). 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating. IEEE Transactions on Microwave Theory and Techniques, 56(2), 339-345. , 0018-9480 , http://hdl.handle.net/10220/5992 , http://dx.doi.org/10.1109/TMTT.2007.914364
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on microwave theory and techniques
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This paper presents two fully integrated CMOS transmit/receive (T/R) switches with improved body-floating operations. The first design exploits an improved transistor layout with asymmetric drain–source region, which reduces the drain–source feed-through for body-floated RF switches. In the second design, a switched body-floating technique is proposed, which reconfigures the body-floating condition of a switch transistor in the ON and OFF states. Both designs are fabricated in a standard 0.13-µm triple-well CMOS process.With regard to 2-dB insertion loss, the switch with asymmetric drain–source achieves 28-GHz bandwidth, which is among the highest reported frequencies for CMOS T/R switches. The bandwidth of the switched body-floating design is 16.6 GHz. There is approximately 5 dB better isolation obtained in the switched body-floating design. With the resistive double-well body-floating technique, 26.5- and 25.5-dBm input 1-dB compression point (P 1dB) are obtained, respectively. Both designs consume only 150 µm X 100 µm die area. The demonstrated T/R switches are suitable for high-frequency and wideband transceivers.

บรรณานุกรม :
Li, Qiang , Zhang, Yue Ping , Yeo, Kiat Seng , Lim, Wei Meng . (2551). 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, Qiang , Zhang, Yue Ping , Yeo, Kiat Seng , Lim, Wei Meng . 2551. "16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, Qiang , Zhang, Yue Ping , Yeo, Kiat Seng , Lim, Wei Meng . "16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2551. Print.
Li, Qiang , Zhang, Yue Ping , Yeo, Kiat Seng , Lim, Wei Meng . 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2551.