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The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers
นักวิจัย : Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2542
อ้างอิง : Goh, W. L., Raza, S. H., Montgomery, J. H., Armstrong, B. M., & Gamble, H. S. (1999). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. IEEE Electron Device Letters, 20(5), 212-214. , 0741-3106 , http://hdl.handle.net/10220/5989 , http://dx.doi.org/10.1109/55.761018
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE electron device letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes.

บรรณานุกรม :
Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . (2542). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . 2542. "The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . "The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2542. Print.
Goh, Wang Ling , Raza, S. H. , Montgomery, J. H. , Armstrong, B. M. , Gamble, H. S. . The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2542.