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Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects
นักวิจัย : Tan, Cher Ming , Zhang, Guan , Gan, Zhenghao
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2547
อ้างอิง : Tan, C. M., Zhang, G., & Gan, Z. (2004). IEEE Transactions on Device and Materials Reliability. IEEE Transactions on Device and Materials Reliability, 4(3), 450-456. , 1530-4388 , http://hdl.handle.net/10220/6008 , http://dx.doi.org/10.1109/TDMR.2004.833228
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on device and materials reliability
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Various physical mechanisms are involved in an electromigration (EM) process occurring in metal thin film. These mechanisms are electron-wind force induced migration, thermomigration due to temperature gradient, stressmigration due to stress gradient, and surface migration due to surface tension in the case where free surface is available. In this work, a finite element model combining all the aforementioned massflow processes was developed to study the behaviors of these physical mechanisms and their interactions in an EM process for both Al and Cu interconnects. The simulation results show that the intrinsic EM damage in Al is mainly driven by the electron-wind force, and thus the electron-wind force induced flux divergence is the dominant cause of Al EM failure. On the other hand, the intrinsic EM damage in Cu is driven initially by the thermomigration, and the electron-wind force dominates the EM failure only at a latter stage. This shows that the early stage of void growth in Cu interconnects is more prone to thermomigration than Al.

บรรณานุกรม :
Tan, Cher Ming , Zhang, Guan , Gan, Zhenghao . (2547). Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Cher Ming , Zhang, Guan , Gan, Zhenghao . 2547. "Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Cher Ming , Zhang, Guan , Gan, Zhenghao . "Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2547. Print.
Tan, Cher Ming , Zhang, Guan , Gan, Zhenghao . Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2547.