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Current crowding effect on copper dual damascene via bottom failure for ULSI applications

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Current crowding effect on copper dual damascene via bottom failure for ULSI applications
นักวิจัย : Tan, Cher Ming , Arijit, Roy , Vairagar, A. V. , Krishnamoorthy, Ahila , Mhaisalkar, Subodh Gautam
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2548
อ้างอิง : Tan, C. M., Arijit, R., Vairagar, A. V., Krishnamoorthy, A., & Mhaisalkar, S. G. (2005). Current crowding effect on copper dual damascene via bottom failure for ULSI applications. IEEE Transactions on Device and Materials Reliability, 5(2), 198-205. , 1530-4388 , http://hdl.handle.net/10220/4644 , http://dx.doi.org/10.1109/TDMR.2005.846830
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on device and materials reliability
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux divergence based finite element analyses is performed and stress-migration is found to be important in the failure rate behavior observed. Semi-classical width dependence Black’s equation together with the finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the interface between the line and via for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.

บรรณานุกรม :
Tan, Cher Ming , Arijit, Roy , Vairagar, A. V. , Krishnamoorthy, Ahila , Mhaisalkar, Subodh Gautam . (2548). Current crowding effect on copper dual damascene via bottom failure for ULSI applications.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Cher Ming , Arijit, Roy , Vairagar, A. V. , Krishnamoorthy, Ahila , Mhaisalkar, Subodh Gautam . 2548. "Current crowding effect on copper dual damascene via bottom failure for ULSI applications".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Cher Ming , Arijit, Roy , Vairagar, A. V. , Krishnamoorthy, Ahila , Mhaisalkar, Subodh Gautam . "Current crowding effect on copper dual damascene via bottom failure for ULSI applications."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print.
Tan, Cher Ming , Arijit, Roy , Vairagar, A. V. , Krishnamoorthy, Ahila , Mhaisalkar, Subodh Gautam . Current crowding effect on copper dual damascene via bottom failure for ULSI applications. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.