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Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate

หน่วยงาน Universiti Sains Malaysia, Malaysia

รายละเอียด

ชื่อเรื่อง : Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate
นักวิจัย : Rais, Shamsul Amir Abdul , Hassan, Zainuriah , Bakar, Ahmad Shuhaimi Abu , Yusuf, Yusnizam , Taib, Muhamad Ikram Md , Sulaiman, Abdullah Fadil , Hussin, Hayatun Najihah , Keiji, Nagai , Ahmad, Mohd Fairus , Yuka, Akimoto , Dai, Shoji
คำค้น : QC1-999 Physics
หน่วยงาน : Universiti Sains Malaysia, Malaysia
ผู้ร่วมงาน : -
ปีพิมพ์ : 2562
อ้างอิง : http://eprints.usm.my/48887/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2029.pdf , Rais, Shamsul Amir Abdul and Hassan, Zainuriah and Bakar, Ahmad Shuhaimi Abu and Yusuf, Yusnizam and Taib, Muhamad Ikram Md and Sulaiman, Abdullah Fadil and Hussin, Hayatun Najihah and Keiji, Nagai and Ahmad, Mohd Fairus and Yuka, Akimoto and Dai, Shoji (2019) Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate. In: International Conference On Semiconductor Materials Technology.
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : http://eprints.usm.my/48887/
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The indium composition in InxGa1-xN/GaN multi-quantum well structure e(MQW) is crucial because lower indium composition will shift the wavelength towards ultraviolet region. Nevertheless, at certain indium content in MQW, it will out diffuse from the MQW resulting in the wavelength shift from green to much shorter wavelength, after the annealing process for p-type activation. In this study, we had grown a full Light Emitting Diode device with the MQW layer at a relative high temperature for green LED with indium pre-flow at the top of n-type layer just beneath the MQW using Metal Organic Chemical Vapor Deposition (MOCVD). Transmission Electron Microscopy (TEM) image of the MQW prior and post the activation of p-type had been observed, which resulted in good contrast, showing the abruptness of the MQW layer of the device. Homogenous layers of InxGa1- xN/GaN has been observed. We also managed to reduce the wavelength shift of the device significantly. The optical, crystal properties of grown devices had been studied.

บรรณานุกรม :
Rais, Shamsul Amir Abdul , Hassan, Zainuriah , Bakar, Ahmad Shuhaimi Abu , Yusuf, Yusnizam , Taib, Muhamad Ikram Md , Sulaiman, Abdullah Fadil , Hussin, Hayatun Najihah , Keiji, Nagai , Ahmad, Mohd Fairus , Yuka, Akimoto , Dai, Shoji . (2562). Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate.
    กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia.
Rais, Shamsul Amir Abdul , Hassan, Zainuriah , Bakar, Ahmad Shuhaimi Abu , Yusuf, Yusnizam , Taib, Muhamad Ikram Md , Sulaiman, Abdullah Fadil , Hussin, Hayatun Najihah , Keiji, Nagai , Ahmad, Mohd Fairus , Yuka, Akimoto , Dai, Shoji . 2562. "Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate".
    กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia.
Rais, Shamsul Amir Abdul , Hassan, Zainuriah , Bakar, Ahmad Shuhaimi Abu , Yusuf, Yusnizam , Taib, Muhamad Ikram Md , Sulaiman, Abdullah Fadil , Hussin, Hayatun Najihah , Keiji, Nagai , Ahmad, Mohd Fairus , Yuka, Akimoto , Dai, Shoji . "Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate."
    กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia, 2562. Print.
Rais, Shamsul Amir Abdul , Hassan, Zainuriah , Bakar, Ahmad Shuhaimi Abu , Yusuf, Yusnizam , Taib, Muhamad Ikram Md , Sulaiman, Abdullah Fadil , Hussin, Hayatun Najihah , Keiji, Nagai , Ahmad, Mohd Fairus , Yuka, Akimoto , Dai, Shoji . Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate. กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia; 2562.