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High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

หน่วยงาน Universiti Sains Malaysia, Malaysia

รายละเอียด

ชื่อเรื่อง : High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
นักวิจัย : Al-Hardan, Naif H. , Abdul Hamid, Muhammad Azmi , M. Ahmed, Naser , Jalar, Azman , Shamsudin, Roslinda , Kamil Othman, Norinsan , Lim, Kar Keng , Chiu, Weesiong , N. Al-Rawi, Hamzah
คำค้น : QC1-999 Physics , TK1-9971 Electrical engineering. Electronics. Nuclear engineering
หน่วยงาน : Universiti Sains Malaysia, Malaysia
ผู้ร่วมงาน : -
ปีพิมพ์ : 2559
อ้างอิง : http://eprints.usm.my/36977/1/(High_Sensitivity_pH_Sensor)_sensors%2D16%2D00839.pdf , Al-Hardan, Naif H. and Abdul Hamid, Muhammad Azmi and M. Ahmed, Naser and Jalar, Azman and Shamsudin, Roslinda and Kamil Othman, Norinsan and Lim, Kar Keng and Chiu, Weesiong and N. Al-Rawi, Hamzah (2016) High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors, 16 (6). pp. 1-12. ISSN 1424-8220
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : http://www.mdpi.com/1424-8220/16/6/839 , http://eprints.usm.my/36977/
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

บรรณานุกรม :
Al-Hardan, Naif H. , Abdul Hamid, Muhammad Azmi , M. Ahmed, Naser , Jalar, Azman , Shamsudin, Roslinda , Kamil Othman, Norinsan , Lim, Kar Keng , Chiu, Weesiong , N. Al-Rawi, Hamzah . (2559). High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.
    กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia.
Al-Hardan, Naif H. , Abdul Hamid, Muhammad Azmi , M. Ahmed, Naser , Jalar, Azman , Shamsudin, Roslinda , Kamil Othman, Norinsan , Lim, Kar Keng , Chiu, Weesiong , N. Al-Rawi, Hamzah . 2559. "High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor".
    กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia.
Al-Hardan, Naif H. , Abdul Hamid, Muhammad Azmi , M. Ahmed, Naser , Jalar, Azman , Shamsudin, Roslinda , Kamil Othman, Norinsan , Lim, Kar Keng , Chiu, Weesiong , N. Al-Rawi, Hamzah . "High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor."
    กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia, 2559. Print.
Al-Hardan, Naif H. , Abdul Hamid, Muhammad Azmi , M. Ahmed, Naser , Jalar, Azman , Shamsudin, Roslinda , Kamil Othman, Norinsan , Lim, Kar Keng , Chiu, Weesiong , N. Al-Rawi, Hamzah . High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia; 2559.