ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Yu, Hongyu
หน่วยงาน Nanyang Technological University, Singapore
จำนวนงานวิจัยจำแนกรายปี
บุคคลที่เคยร่วมงานวิจัย
ความเชี่ยวชาญ
บุคคลที่เคยร่วมงานวิจัย
ปี
# พ.ศ. จำนวน
1 2557 3
2 2556 3
3 2555 21
4 2554 3
5 2551 1
ผลงานวิจัย
# หัวเรื่อง
ปี พ.ศ. 2557
1 High efficiency silicon nanohole/organic heterojunction hybrid solar cell
2 Light trapping in hybrid nanopyramid and nanohole structure silicon solar cell beyond the Lambertian limit
3 Simulated optical absorption enhancement in random silicon nanohole structure for solar cell application
ปี พ.ศ. 2556
4 A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode
5 Design guidelines for slanting silicon nanowire arrays for solar cell application
6 The transport properties of oxygen vacancy-related polaron-like bound state in HfOx
ปี พ.ศ. 2555
7 Design principles for plasmonic thin film GaAs solar cells with high absorption enhancement
8 Transport properties of HfO2−x based resistive-switching memories
9 Large magnetocaloric effect and refrigerant capacity in Gd–Co–Ni metallic glasses
10 Crystallization and surface texturing of amorphous-Si induced by UV laser for photovoltaic application
11 Mechanism of different switching directions in graphene oxide based RRAM
12 Structure and magnetic properties of Mn(Zn)Fe2−xRExO4 ferrite nano-powders synthesized by co-precipitation and refluxing method
13 UV-blocking ZnO nanostructure anti-reflective coatings
14 Solar energy harnessing in hexagonally arranged Si nanowire arrays and effects of array symmetry on optical characteristics
15 A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
16 A self-rectifying HfOx-based unipolar RRAM with NiSi electrode
17 Positive bias-induced Vth instability in graphene field effect transistors
18 Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides
19 Surface nanostructure optimization for GaAs solar cell application
20 Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
21 Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment
22 Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
23 Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells
24 A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application
25 A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
26 Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect
27 Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection
ปี พ.ศ. 2554
28 Perspective of flash memory realized on vertical Si nanowires
29 Nanohole structure as efficient antireflection layer for silicon solar cell fabricated by maskless laser annealing
30 Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
ปี พ.ศ. 2551
31 Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode