ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Yoon, Soon Fatt
หน่วยงาน Nanyang Technological University, Singapore
จำนวนงานวิจัยจำแนกรายปี
บุคคลที่เคยร่วมงานวิจัย
ความเชี่ยวชาญ
ปี
# พ.ศ. จำนวน
1 2557 1
2 2556 2
3 2555 7
4 2554 3
5 2553 1
6 2552 1
7 2550 6
8 2549 4
9 2548 4
10 2547 2
11 2546 2
12 2545 4
ผลงานวิจัย
# หัวเรื่อง
ปี พ.ศ. 2557
1 Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
ปี พ.ศ. 2556
2 Low temperature grown GaNAsSb : a promising material for photoconductive switch application
3 Low temperature direct wafer bonding of GaAs to Si via plasma activation
ปี พ.ศ. 2555
4 Broadband terahertz plasmonic response of touching InSb disks
5 High power single-sided Bragg reflection waveguide lasers with dual-lobed far field
6 Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy
7 Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission
8 N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
9 Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing
10 Large size self-assembled quantum rings : quantum size effect and modulation on the surface diffusion
ปี พ.ศ. 2554
11 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
12 Effect of N incorporation on the characteristics of InSbN P–N diodes
13 InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy
ปี พ.ศ. 2553
14 Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure
ปี พ.ศ. 2552
15 Measurement of buried undercut structures in microfluidic devices by laser fluorescent confocal microscopy
ปี พ.ศ. 2550
16 Tuning InAs quantum dots for high areal density and wideband emission
17 Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
18 Interdiffusion in narrow InGaAsN∕GaAs quantum wells
19 Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector
20 GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
21 Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
ปี พ.ศ. 2549
22 Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs
23 Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells
24 Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
25 Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005
ปี พ.ศ. 2548
26 Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
27 Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method
28 Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy
29 Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers
ปี พ.ศ. 2547
30 The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law
31 Investigation of the optical properties of InGaAsN∕GaAs∕GaAsP multiple-quantum-well laser with 8-band and 10-band k[middle dot]p model
ปี พ.ศ. 2546
32 Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells
33 Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
ปี พ.ศ. 2545
34 Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
35 Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
36 Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source
37 Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy