ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Ng, Geok Ing
หน่วยงาน Nanyang Technological University, Singapore
# พ.ศ. จำนวน
1 2558 2
2 2557 3
3 2556 2
4 2555 9
# หัวเรื่อง
ปี พ.ศ. 2558
1 Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition
2 Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
ปี พ.ศ. 2557
3 Band alignment between GaN and ZrO2 formed by atomic layer deposition
4 Relative intensity noise of silicon hybrid laser
5 Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition
ปี พ.ศ. 2556
6 A nanoelectromechanical systems actuator driven and controlled by Q-factor attenuation of ring resonator
7 Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
ปี พ.ศ. 2555
8 AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
9 A modular approach to design a full three-way 8 to 18 GHz MMIC active circulator
10 High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology
11 Positive bias-induced Vth instability in graphene field effect transistors
12 Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate
13 GaN-on-Silicon integration technology
14 Compact true time delay line with partially shielded coplanar waveguide transmission lines
15 Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate
16 Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation