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Ju, Zhengang
หน่วยงาน Nanyang Technological University, Singapore
- Ju, Zhen Gang
# พ.ศ. จำนวน
1 2557 8
2 2556 6
3 2555 1
# หัวเรื่อง
ปี พ.ศ. 2557
1 On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
2 On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
3 Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
4 Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
5 On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
6 Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
7 Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
8 Low thermal-mass LEDs : size effect and limits
ปี พ.ศ. 2556
9 Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
10 InGaN/GaN light-emitting diode with a polarization tunnel junction
11 Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
12 Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
13 PN-type quantum barrier for InGaN/GaN light emitting diodes
14 Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
ปี พ.ศ. 2555
15 On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer