ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Ji, Yun
หน่วยงาน Nanyang Technological University, Singapore
# พ.ศ. จำนวน
1 2558 1
2 2557 9
3 2556 5
4 2555 1
# หัวเรื่อง
ปี พ.ศ. 2558
1 A hole modulator for InGaN/GaN light-emitting diodes
ปี พ.ศ. 2557
2 On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
3 On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
4 Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
5 Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
6 On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
7 Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
8 Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
9 A hole accelerator for InGaN/GaN light-emitting diodes
10 Low thermal-mass LEDs : size effect and limits
ปี พ.ศ. 2556
11 Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
12 InGaN/GaN light-emitting diode with a polarization tunnel junction
13 Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
14 PN-type quantum barrier for InGaN/GaN light emitting diodes
15 Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
ปี พ.ศ. 2555
16 Fluorophore-doped core–multishell spherical plasmonic nanocavities : resonant energy transfer toward a loss compensation