ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Gao, Yuan
หน่วยงาน Nanyang Technological University, Singapore
# พ.ศ. จำนวน
1 2557 3
2 2556 8
3 2555 5
# หัวเรื่อง
ปี พ.ศ. 2557
1 Stimulated emission and lasing from CdSe/CdS/ZnS core-multi-shell quantum dots by simultaneous three-photon absorption
2 A 3.54 nJ/bit-RX, 0.671 nJ/bit-TX burst mode super-regenerative UWB transceiver in 0.18- μm CMOS
3 Blue liquid lasers from solution of CdZnS/ZnS ternary alloy quantum dots with quasi-continuous pumping
ปี พ.ศ. 2556
4 Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots
5 Electron trap transformation under positive-bias temperature stressing
6 Negative-bias temperature instability – insight from recent dynamic stress experiments
7 A 110pJ/b multichannel FSK/GMSK/QPSK/p/4-DQPSK transmitter with phase-interpolated dual-injection DLL-based synthesizer employing hybrid FIR
8 Quantum dot light-emitting diode with quantum dots inside the hole transporting layers
9 On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing
10 Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes
11 Efficient energy transfer under two-photon excitation in a 3D, supramolecular, Zn(II)-coordinated, self-assembled organic network
ปี พ.ศ. 2555
12 A self-powered power conditioning IC for piezoelectric energy harvesting from short-duration vibrations
13 The link between NBTI and TDDB of high-k gate P-MOSFETs
14 MIMO ultra-wideband system for breast cancer detection
15 A low power interference robust IR-UWB transceiver SoC for WBAN applications
16 Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs