ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Fan, Weijun
หน่วยงาน Nanyang Technological University, Singapore
# พ.ศ. จำนวน
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# หัวเรื่อง
ปี พ.ศ. 2556
1 Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells
2 Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
ปี พ.ศ. 2555
3 Electronic band structure and effective mass parameters of Ge1−xSnx alloys
4 Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures : from a quantum lens to a quantum ring
5 Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field
ปี พ.ศ. 2554
6 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
7 Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
ปี พ.ศ. 2553
8 Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser
9 Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure
ปี พ.ศ. 2552
10 Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dots
ปี พ.ศ. 2551
11 Intersubband transitions in InGaAsN/GaAs quantum wells
ปี พ.ศ. 2550
12 Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model
13 Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection
14 Tuning InAs quantum dots for high areal density and wideband emission
15 Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
16 Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
17 Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots
18 Giant and zero electron g factors of dilute nitride semiconductor nanowires
19 High and electric field tunable Curie temperature in diluted magnetic semiconductor nanowires and nanoslabs
20 Interdiffusion in narrow InGaAsN∕GaAs quantum wells
21 Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector
22 GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
23 Highly anisotropic Zeeman splittings of wurtzite Cd[sub 1−x]Mn[sub x]Se quantum dots
24 Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
ปี พ.ศ. 2549
25 Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs
26 Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells
27 Band parameters and electronic structures of wurtzite ZnO and ZnO∕MgZnO quantum wells
28 Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
29 Effects of size and shape on electronic states of quantum dots
30 Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005
ปี พ.ศ. 2548
31 Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method
32 Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method
33 Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
34 Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition
35 Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models
36 Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy
37 Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers
ปี พ.ศ. 2547
38 The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law
39 Investigation of the optical properties of InGaAsN∕GaAs∕GaAsP multiple-quantum-well laser with 8-band and 10-band k[middle dot]p model
ปี พ.ศ. 2546
40 Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells
41 Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
ปี พ.ศ. 2545
42 Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
43 Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
44 Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source
45 Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy
ปี พ.ศ. 2543
46 X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
ปี พ.ศ. 2542
47 Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
ปี พ.ศ. 2541
48 Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
49 Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
50 Polarization dependence of intraband absorption in self-organized quantum dots
51 Characteristics of InGaAs quantum dot infrared photodetectors
52 Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
ปี พ.ศ. 2539
53 Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
ปี พ.ศ. 2532
54 Electronic structures of superlattices under in-plane magnetic field