ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Ang, Diing Shenp
หน่วยงาน Nanyang Technological University, Singapore
# พ.ศ. จำนวน
1 2557 1
2 2556 8
3 2555 5
4 2554 1
# หัวเรื่อง
ปี พ.ศ. 2557
1 Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device
ปี พ.ศ. 2556
2 Electron trap transformation under positive-bias temperature stressing
3 Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy.
4 Negative-bias temperature instability – insight from recent dynamic stress experiments
5 A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration.
6 Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon
7 Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
8 Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation
9 On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing
ปี พ.ศ. 2555
10 Correlation between oxide trap generation and negative-bias temperature instability.
11 The link between NBTI and TDDB of high-k gate P-MOSFETs
12 Are interface state generation and positive oxide charge trapping under negative-bias temperature stressing correlated or coupled?
13 Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing.
14 Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
ปี พ.ศ. 2554
15 Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy.